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Semiconductor converters THERMAL ENERGY ENVIRONMENT
The ENERGY direct electric current

Authors: Anatoly grain

The problem of modern power consists in the fact that the production of electricity - a source of human material wealth, is in ruinous confrontation with its habitat - the nature and as a result of this - the inevitability of environmental disaster.

Search and discovery of alternative, cleaner ways to produce electricity - the actual task of Humanity.

One of the sources of energy, is a natural environment: the air of the atmosphere, water, seas and oceans, which contain an enormous amount of heat energy from the sun.

A method for converting thermal energy of the environment into the energy of a constant electric current, based on the phenomena of contact between the metal and semiconductors of different conductivity type.

Results: a schematic diagram of the inverter, the technological conditions of production and a brief description of the operating principle.

Converter is a schematic diagram of the following (see. Fig. 1).

where: P - the semiconductor chip (silicon n-type); p-n - the transition from the contact electric field Ek; M ₁ - metallic contact with the p-region (aluminum); M ₂ - metal contact with n-region (aluminum); d - depth of the p-n junction (no more than 10 microns); RH - load resistance of the external circuit.

The principle of operation of the converter is as follows.

For example, the work function of the n-type semiconductor is 4.25 eV, a p-type - 5.25 eV Aluminum - 4.25 eV. Therefore, contact M ₂ with n-type semiconductor is ohmic and does not affect the operation of the converter and the contact M ₁ with a p-type semiconductor is injecting.

Under the influence of thermal motion and forces resulting from the difference of work function, electrons from the metal contact M ₁ are injected into the p-semiconductor. Some of the electrons recombine with holes in the p-region of the crystal, and the rest of the electrons will be shifted electric field of p-n transition Ek in the n-region of the crystal. In this n-crystal semiconductor region and the contact M ₂ are negatively charged and terminal M ₁ of the departure from it electrons - positive, which ultimately lead to the emergence of the electrical potential difference between the terminals _of M ₁ and M _2.

The flow of electrons in M ₁ M ₂ takes place as long as the increasing electric field between the counter-contacts does not cause the flow of electrons from the n-p-region in the crystal region due to lower the potential barrier of p-n junction. When the electron currents become equal, install electrical and thermodynamic equilibrium in an isolated crystal. At the same time contacts between M ₁ and M ₂ is established a potential difference equal to half the difference between the contact potential of the pn junction (in this case - 0,55V), which means that between EMF (idle move).

If close contact M ₁ and M ₂ external metallic conductor with a resistance RL, the electrical and thermodynamic equilibrium of the semiconductor crystal and disturbed flow in the load circuit electric current I RL. This pn junction will be cooled, t. To. The energy of the electrons passing from the p-type region to the n-semiconductor region will be increased due to the internal (thermal) energy of the crystal lattice of a semiconductor. To maintain a constant load circuit by a current value necessary to supply to the crystal heat from the environment - Qo. c.

print version
Author: Anatoly grain
PS material is protected.
Publication date 04.04.2004gg

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