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INVENTION
Patent of the Russian Federation RU2292608
DEVICE OF ACCUMULATION OF ELECTRIC CHARGE BASED ON ELECTRONIC PUMP, STRUCTURE OF SEMICONDUCTOR - METAL - SEMICONDUCTOR
The name of the inventor: Sinelnikov Boris Mikhailovich (RU); Kargin Nikolai Ivanovich (RU); Yury Ivanovich Pugnuev (RU); Eduard Vladimirovich's Headquarters (RU); Alexander Vladimirovich Headquarters (RU); Svistunov Igor Viktorovich
The name of the patent holder: State Educational Institution of Higher Professional Education "North Caucasus State Technical University"
Address for correspondence: 355029, Stavropol, Kulakov Avenue, 2, SevKavSTU
The effective date of the patent: 2005.03.28
The invention relates to sources of accumulation of electric charge and can be used as a battery of electric energy. The technical result of the invention is: reduction in size, simplification of manufacturing technology, increase in the amount of energy stored. According to the invention, the electric charge storage device consists of an ohmic contact of an emitter, a semiconductor emitter layer, a metal base layer, a semiconductor layer of the collector (charge accumulation occurs therein), ohmic contact of the collector. On the basis of this structure, an electronic pump is realized, that is, electrons are pumped by one semiconductor region from the other; Thus, an accumulation of charge is obtained, depending on the number of injected electrons.
DESCRIPTION OF THE INVENTION
The invention relates to sources of accumulation of electric charge and can be used as a battery of electric energy.
The closest analogue of this device is the electrochemical storage of electrical energy (RF Certificate for Utility Model No. 2101807, cl.6 H 01 G 9/004). The electrochemical storage of electric energy contains two electrodes with a porous reinforcing structure made of a metal sponge 0.2-2.0 mm thick filled with carbon powder with a high specific surface, separated by a porous separator. The maximum pore size of the separator is smaller than the minimum particle size of the coal powder.
The disadvantages of this element are: 1) relatively large sizes; 2) a relatively small number of recharge cycles (this is associated with the destruction of working layers); 3) the storage time of the stored energy is limited by the movement and annihilation of unlike charged particles (coal powder).
The technical result achieved in the implementation of the claimed invention is as follows: 1) reduction in size; 2) simplification of manufacturing technology; 3) the possibility of creating both planar (two-dimensional) and three-dimensional (three-dimensional) matrices, which will significantly increase the amount of accumulated energy; 4) increase in the storage time of the stored energy; 5) increase in the number of recharge cycles; 6) the possibility of recharging from sources that generate a small amount of energy sufficient to excite and transfer at least one electron. The sources of recharging can serve as sources of current generation, photo elements and even thermocouple and other elements, whose operation is based on the emergence of EMF between regions having a temperature gradient.
This technical result is achieved by the fact that the electric charge accumulation device based on the electronic pump, the semiconductor-metal-semiconductor (PMC) structure consists of the following layers: the ohmic contact of the emitter, the semiconductor layer of the emitter, the metal base layer, the semiconductor layer of the collector, the ohmic contact of the collector. On the basis of this structure, an electronic pump is realized, that is, electrons are pumped by one semiconductor region from the other; Thus, an accumulation of charge is obtained, depending on the number of injected electrons.
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The figure shows the stratified structure of an electric charge storage device based on an electronic pump, a semiconductor-metal-semiconductor structure. The figure shows the stratified structure of the electric charge storage device, which consists of the ohmic contact of the emitter 1, the semiconductor layer of the emitter 2, the metal layer of the base 3, the semiconductor layer of the collector 4, the ohmic contact of the collector 5. |
ACCUMULATION OF CHARGE HAPPENS AS FOLLOWING
Electrons, accelerated by the action of an electric field applied to the emitter region 2, overcome the potential well of the metal 3 and enter the collector region 4, to which no voltage is applied, that is, it is "suspended". As a result, in the region of the collector 4, an electron concentration arises that is excessive over its own, which causes the accumulation of electric charge in the device.
CLAIM
The device for accumulating electric charge on the basis of an electronic pump, a semiconductor-metal-semiconductor structure consisting of an ohmic contact between an emitter, an emitter semiconductor layer, a base metal layer, a semiconductor layer of the collector, accumulation of a charge, ohmic contact of the collector occurs therein, characterized in that The semiconductor-metal-semiconductor structure has a charge accumulation system such that the emitter layer is injection, and the collector layer has rich contacts to the metal base where an excess charge is accumulated, depending on the number of injected electrons.
print version
Publication date 16.02.2007gg
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